Vishay's new N-channel power MOSFET refreshes minimum on-resistance record

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Pennsylvania, MALVERN - March 31, 2011 - Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the release of the new 40V and 60V N-channel Trench FET? power MOSFETs - SiR640DP and SiR662DP. Available in SO-8 or PowerPAK® SO-8 packages, the devices feature the industry's lowest on-resistance and the lowest on-resistance and gate charge product, the figure of merit.

The 40V SiR640DP has an on-resistance of 1.7m? and 2.2m? at 10V and 4.5V, and a FOM of 128m?-nC and 76m?-nC at 10V and 4.5V, respectively. The device's on-resistance at 4.5V is 4% lower than the closest competing MOSFET , while the FOM at 4.5V is 15.5% lower.

The on-resistance of the 60V SiR662DP at 10V and 4.5V is 2.7m? and 3.5m?, respectively, and the FOM at 10V and 4.5V is 172.8m?-nC and 105m?-nC, respectively. The on-resistance of the device at 10V and 4.5V is 3.5% and 27% lower, respectively, than the closest MOSFET of the same grade, and the FOM at 10V and 4.5V is 23% and 57% lower, respectively. Low on-resistance and low FOM will reduce switching losses over the entire operating range of the device.

Both devices use a new silicon technology in the manufacturing process that uses optimized trench density and a special gate structure. For designers, lower on-resistance means lower conduction losses, which reduces power consumption, especially in heavy-duty situations. The device's low FOM reduces switching losses in high frequency and switching applications, especially in light load and standby modes. The high frequency of the device allows the designer to increase the power density of their system, or at the same time achieve lower power loss and greener applications.

SiR662DP and SiR640DP for secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switches in DC/DC converters, point-of-load modules, motor drives, bridge inverters and alternative mechanical relays Applications. Typical end products include communications power, industrial automation and professional gaming consoles, uninterruptible power supplies (UPS) and consumer applications.

The MOSFET's voltage rating of 4.5V allows many designers to use existing 5V supply rails that power digital logic circuits in their systems, eliminating the need to free up and find the right space for 10V power rails. The 4.5V voltage rating also significantly reduces gate drive losses while also enabling a lower voltage, lower cost 5V PWMIC.

Both chips are 100% Rg and UIS tested, comply with the halogen-free regulations of IEC61249-2-21, and comply with RoHS Directive 2002/95/EC.

Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of sixteen weeks for larger orders.

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